693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Foran, G. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2011Extended x-ray absorption fine structure study of porous GaSb formed by ion implantationcitations
- 2009Anisotropic vibrations in crystalline and amorphous InPcitations
- 2007Modification of embedded Cu nanoparticlescitations
- 2007Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2citations
- 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2citations
- 2007EXAFS study of the amorphous phase of InP after swift heavy ion irradiationcitations
- 2007Amorphization of embedded Cu nanocrystals by ion irradiationcitations
- 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiationcitations
- 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniquescitations
- 2005EXAFS comparison of crystalline/continuous and amorphous/porous GaSbcitations
- 2005Irradiation induced defects in nanocrystalline Cucitations
- 2005Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicacitations
- 2005Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2citations
- 2003Common structure in amorphised compound semiconductorscitations
- 2002Structural characterization of amorphised InAs with synchrotron radiationcitations
- 2001Structure and low-temperature thermal relaxation of ion-implanted germaniumcitations
- 2000Micro- and macro-structure of implantation-induced disorder in Gecitations
Places of action
| Organizations | Location | People |
|---|
article
Structural characterization of amorphised InAs with synchrotron radiation
Abstract
Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general. © 2002 Elsevier Science B.V. All rights reserved.