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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kucheyev, S. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2007Energetic Processing of Interstellar Silicate Grains by Cosmic Rayscitations
- 2005Ion irradiation-induced disordering of semiconductorscitations
- 2004Ion-beam-defect processes in group-III nitrides and ZnOcitations
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Electrical isolation of ZnO by ion bombardmentcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001Electrical isolation of GaN by MeV ion irradiationcitations
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Abstract
<p>The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. The results point to substantial dynamic annealing of radiation defects even during heavy ion (<sup>197</sup>Au) bombardment at liquid nitrogen (LN<sub>2</sub>) temperature. A marked similarity between damage build-up for light (<sup>12</sup>C) and heavy (<sup>197</sup>Au) ion bombardment regimes at LN<sub>2</sub> temperature is observed. However, the damage build-up behavior during room temperature (RT) bombardment with <sup>12</sup>C or <sup>197</sup>Au ions is different. Implantation temperature not only affects the gross level of implantation disorder but also controls the general behavior of damage build-up during light or heavy ion bombardment. For all implant conditions of this study, a band of planar defects nucleates and grows in the bulk with increasing ion dose. An increase in the energy of Au ions from 100 to 2000 keV does not change the main features of damage build-up at LN<sub>2</sub> temperature. The results also show that implantation disorder in GaN depends on beam flux.</p>