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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nunes, Patrícia
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Publications (5/5 displayed)
- 2002Effect of different dopant elements on the properties of ZnO thin filmscitations
- 2001Thin film metal oxide semiconductors deposited on polymeric substrates
- 2001Thin film combustible gas sensors based on zinc oxide
- 2001Correlation between the microscopic and macroscopic characteristics of SnO2 thin film gas sensorscitations
- 2001Production and characterization of large area flexible thin film position sensitive detectorscitations
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article
Effect of different dopant elements on the properties of ZnO thin films
Abstract
In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1 at% of indium which exhibit a resistivity of 1.9101Ocm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9103Ocm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO : In. r 2002 Elsevier Science Ltd. All rights reserved.