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Maroudas, Dimitrios
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Publications (5/5 displayed)
- 2005The role of SiH3 diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films
- 2005Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin filmscitations
- 2005Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfacescitations
- 2004Surface Processes during Growth of Hydrogenated Amorphous Siliconcitations
- 2002Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfacescitations
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article
Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces
Abstract
<p>Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H<sub>2</sub>(D<sub>2</sub>) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.</p>