| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Baptista, J. L.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2004Electrical properties of SrBi2Ta2O9 single crystals grown by self-flux solutioncitations
- 2003Dielectric response of lanthanum-modified Pb(Fe1/2Ta 1/2)O3 relaxor ferroelectricscitations
- 2002Dielectric behavior of Mn-doped morphotropic phase boundary composition in the Pb(Zn1/3Nb2/3)O3-BaTiO3- PbTiO3 system
- 2002Metal-ferroelectric thin film devicescitations
- 2002Effect of lanthanum-doping on the dielectric properties of Pb(Fe1/2Ta1/2)O3 relaxor ferroelectrics
- 2002Dielectric response of PZN-based MPB composition doped with lanthanumcitations
- 2002Optical and photoelectric properties of PZT films for microelectronic applications
- 2002Effect of tungsten doping on the dielectric response of PZN-PT-BT ceramics with the morphotropic phase boundary compositioncitations
- 2001Morphotropic Phase Boundary in the Pb(Zn1/3Nb2/3O3)-BaTiO3-PbTiO3 System
- 2001Photoelectric evaluation of polarization and internal field in PZT thin films
- 2001Relaxor properties of Ba-based layered perovskitescitations
- 2001Dielectric relaxation in Ba-based layered perovskitescitations
- 2001Polarization control and domain manipulation in ferroelectric films with uv lightcitations
- 2001Seeding effect on micro- and domain structure of sol-gel-derived PZT thin filmscitations
- 2001Ba-based layered ferroelectric relaxorscitations
- 2001PZT-based piezoelectric composites via a modified sol-gel routecitations
- 2001Seeding effect on the fatigue behaviour of PZT thin films
- 2001Effect of lanthanum-doping on the dielectric and piezoelectric properties of PZN-based MPB compositioncitations
- 2001Direct effect of illumination on ferroelectric properties of lead zirconate titanate thin filmscitations
- 2001Ferroelectricity of Pb(Zn1/3Nb2/3) O3-BaTiO3-PbTiO3 ceramics in the vicinity of morphotropic phase boundarycitations
- 2000Thick piezoelectric coatings via modified sol-gel technique
- 2000Preparation and characterization of Pb(Fe1/2Ta1/2)O3 relaxor ferroelectriccitations
Places of action
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article
Metal-ferroelectric thin film devices
Abstract
<p>Ferroelectric and high dielectric permittivity films are currently being investigated in view of their use as gate dielectrics in MIS structures. Along with the suppression of tunnelling currents at small gate thickness, they provide a memory function to MIS structures, which can be used in non-volatile memory applications. In this work we report fabrication and characterization of novel metal-ferroelectric-amorphous silicon structures. The structures consist of glass/ITO substrates coated with PZT 20/80 films (sol-gel) followed by an active layer (i-a-SiC:H, deposited by plasma enhanced chemical vapor deposition (PECVD)). A strong capacitance hysteresis is observed in C-V curves in electron accumulation region (V<sub>G</sub> > 0), accompanied with a large increase in the capacitance of ferroelectric-semiconductor structures at low frequencies. Threshold voltage for electron accumulation is about 10 V being dependent on the ferroelectric polarization switching.</p>