| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reynolds, Steve
University of Dundee
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2019A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors
- 2017Photoconductivity in Materials Researchcitations
- 2014Electronic properties of undoped microcrystalline silicon oxide filmscitations
- 2012Properties of thin-film silicon solar cells at very high irradiancecitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2010Excimer laser wet oxidation of hydrogenated amorphous siliconcitations
- 2010Measurement and modelling of transport in amorphous semiconductorscitations
- 2009Carrier mobility and density of states in microcrystalline silicon film compositions, probed using time-of-flight photocurrent spectroscopy
- 2005Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors
- 2004Decay from steady-state photocurrent in amorphous semiconductorscitations
- 2003Analysis and modelling of generation-recombination noise in amorphous semiconductorscitations
- 2002Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopycitations
- 2002Transient decay from the steady-state in microcrystalline silicon
- 2001Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filamentscitations
- 2001Generation-recombination noise in amorphous semiconductorscitations
- 2000Improved high resolution post-transit spectroscopy for determining the density of states in amorphous semiconductors
Places of action
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article
Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopy
Abstract
We report on the effectiveness of two methods for recovering the density of electronic states from transient photocurrent data, one employing an exact solution of the Laplace transformed multiple-trapping rate equations and one a Tikhonov regularization technique. In order to evaluate these methods for recovery of energetically broad and narrower distributions of states we have applied each to data obtained from plasma-enhanced chemical vapor deposition (PECVD) a-Si:H films subjected to progressive light soaking and also to a single crystal sample of tin-doped crystalline CdTe. Both methods are found to perform equally well in terms of accuracy and resolution but the exact method is more sensitive to noise on the input data. A featureless increase in defect density in the PECVD a-Si:H film of a factor of 5–10 is observed on light soaking. Preliminary analysis of the CdTe:Sn data indicates the presence of two narrow bands of states, approximately 0.15 and 0.36 eV below the conduction band edge.