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Adamopoulos, George
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Solution-Processed Metal Oxide Gate Dielectrics and Their Implementations in Zinc Oxide Based Thin Film Transistors
- 2022Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °ccitations
- 2018Characterization of spray pyrolyzed Ga2O3 thin films for thin-film transistor device applications
- 2018(INVITED) Solution-processed metal oxide-based CMOS
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in aircitations
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
- 2017(INVITED) Solution processed metal oxide-based electronics for displays applications employing both inkjet and spray coating techniques
- 2016(INVITED) Solution Processed SiO2 and high-k Dielectrics for MO-based CMOS TFTs
- 2016(INVITED) Solution Processed High-k Dielectrics for Thin Film Transistors Employing Metal Oxide-based Semiconducting Channels
- 2014Solution processed aluminium titanate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2014Structure and properties of solution processed hafnium oxide gate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2013Be-doped ZnO thin-film transistors and circuits fabricated by spray pyrolysis in aircitations
- 2011Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistorscitations
- 2005Optical and electronic properties of plasma-deposited hydrogenated amorphous carbon nitride and carbon oxide filmscitations
- 2004Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopycitations
- 2003The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substratecitations
- 2000Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivitycitations
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article
Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivity
Abstract
X-ray reflectivity (XRR) and Raman scattering are developed as non-destructive methods to find the density and sp(3) content of unhydrogenated and hydrogenated amorphous carbon films. An empirical relationship is found to derive the sp(3) fraction from visible Raman spectra, while ultraviolet (UV) Raman is able to directly detect sp(3) sites. The sp(3) fraction and density are linearly correlated in amorphous carbon (a-C) and hydrogenated amorphous carbon (a-C:H) films.