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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Gupta, Bikesh
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2023Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor depositioncitations
- 2022Ultrathin transparent metal capping layer on metal oxide carrier-selective contacts for Si solar cellscitations
- 2022Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splittingcitations
- 2021Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contactcitations
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article
Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
Abstract
<p>Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoliation technique. The protocol details the fabrication procedure for producing thin monocrystalline semiconductors with thicknesses in the range of a few tens of micrometers from thick donor substrates. In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochemical water-splitting to produce hydrogen fuel. For complete details on the use and execution of this protocol, please refer to Lee et al. (2021).</p>