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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jancelewicz, Mariusz Andrzej
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2016Enhancement of optical and mechanical properties of Si nanopillars by ALD TiO<inf>2</inf>coatingcitations
- 2015Tailoring the structural, optical, and photoluminescence properties of porous silicon/TiO<inf>2</inf> nanostructurescitations
- 2015Structural and XPS characterization of ALD Al<inf>2</inf>O<inf>3</inf> coated porous siliconcitations
- 2010Molecular dynamics in grafted polydimethylsiloxanescitations
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article
Structural and XPS characterization of ALD Al<inf>2</inf>O<inf>3</inf> coated porous silicon
Abstract
<p>Al<sub>2</sub>O<sub>3</sub> thin films were grown on highly-doped p-Si (100) macro- and mesoporous structures by atomic layer deposition (ALD) using trimethylaluminum (TMA) and water H<sub>2</sub>O as precursors at 300 °C. The porous silicon (PSi) samples were fabricated utilizing a metal-assisted chemical etching process (MACE). The morphology of the deposited films and initial silicon nanostructures were investigated by means of scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX). X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical elemental composition by observing the behavior of the Al 2p, O 1s and C 1s lines. Calculated Auger parameter and binding energy analysis confirmed Al<sub>2</sub>O<sub>3</sub> formation. The measurement of band gap energies of Al<sub>2</sub>O<sub>3</sub> was performed.</p>