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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Vishnyakov, Vm
University of Huddersfield
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (30/30 displayed)
- 2022Reactively sintered TiB2-based heteromodulus UHT ceramics with in-situ formed graphene for machinable concentrated solar light absorberscitations
- 2022High Densification of Tungsten via Hot Pressing at 1300 °C in Carbon Presencecitations
- 2022Reaction Sintering of Biocompatible Al2O3-hBN Ceramicscitations
- 2022Reaction Sintering of Machinable TiB2-BN-C Ceramics with In-Situ Formed h-BN Nanostructurecitations
- 2021Integrated Nanomechanical Characterisation of Hard Coatingscitations
- 2021Thermal conductivity and thermal shock resistance of TiB2-based UHTCs enhanced by graphite plateletscitations
- 2021Corrosion performance and mechanical properties of FeCrSiNb amorphous equiatomic HEA thin filmcitations
- 2021Deviating from the pure MAX phase conceptcitations
- 2021Single-phase FeMnNiAl compositionally complex alloycitations
- 2020Demanding applications in harsh environment–FeCrMnNiC amorphous equiatomic alloy thin filmcitations
- 2020Reactive hot pressing route for dense ZrB2-SiC and ZrB2-SiC-CNT ultra-high temperature ceramicscitations
- 2020Effect of aluminium concentration on phase formation and radiation stability of Cr2Al x C thin filmcitations
- 2019Mechanisms of TiB2 and graphite nucleation during TiC–B4C high temperature interactioncitations
- 2019Reactive sintering of TiB2-SiC-CNT ceramicscitations
- 2018Synthesis and characterisation of high-entropy alloy thin films as candidates for coating nuclear fuel cladding alloyscitations
- 2018Use of ion-assisted sputtering technique for producing photocatalytic titanium dioxide thin filmscitations
- 2017Structure formation of TiB2-TiC-B4C-C hetero-modulus ceramics via reaction hot pressingcitations
- 2017Nano-scratch testing of (Ti,Fe)Nx thin films on siliconcitations
- 2017Fracture toughness in some hetero-modulus composite carbidescitations
- 2015Development of DLC coating architectures for demanding functional surface applications through nano- and micro-mechanical testingcitations
- 2015Interface Dynamics in Strained Polymer Nanocompositescitations
- 2013Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°ccitations
- 2013Nanoscale Friction Measurements Up to 750 °Ccitations
- 2011Amorphous boron containing silicon carbo-nitrides created by ion sputteringcitations
- 2011Photocatalytic activity of reactively sputtered and directly sputtered titania coatingscitations
- 2010Physicomechanical properties of ultrahigh temperature heteromodulus ceramics based on group 4 transition metal carbidescitations
- 2010Comparison of Ti-Zr-V nonevaporable getter films deposited using alloy or twisted wire sputter-targetscitations
- 2006Single ion-induced amorphous zones in silicon
- 2006Influence of mechanical properties on the nanoscratch behaviour of hard nanocomposite TiN/Si3N4 coatings on Sicitations
- 2005Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam methodcitations
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article
Ti3SiC2-formation during Ti-C-Si multilayer deposition by magnetron sputtering at 650°c
Abstract
<p>Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti<sub>0.47</sub>Si<sub>0.14</sub>C<sub>0.39</sub> by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti <sub>3</sub>SiC<sub>2</sub> MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E<sub>2g</sub> and A<sub>g</sub> peaks associated with Ti<sub>3</sub>SiC<sub>2</sub> formation was observed.</p>