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Kakushima, K.
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article
Effects of aluminum doping on lanthanum oxide gate dielectric films
Abstract
This work reports a novel method for improving the electrical properties of lanthanum gate oxide (La <sub>2</sub>O <sub>3</sub>) by using aluminum doping and rapid thermal annealing (RTA) techniques. In the bulk of the Al-doped La <sub>2</sub>O <sub>3</sub> film together with 600°C RTA, we found that the aluminum atoms were incorporated into the oxide network and the film was transformed into lanthanum aluminate complex oxide. At the interface, a thin Al <sub>2</sub>O <sub>3</sub> layer was formed. This interfacial Al <sub>2</sub>O <sub>3</sub> layer suppressed the out-diffusion of substrate Si, the formation of interfacial silicate layer and silicide bonds. These effects resulted in a significant reduction on the bulk and interface trap densities and hence the gate leakage current. © 2011 Elsevier Ltd. All rights reserved.