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Elangovan, Elamurugu
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Publications (4/4 displayed)
- 2012p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistorscitations
- 2008Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperaturecitations
- 2008Effect of annealing on the properties of RF sputtered indium molybdenum oxide thin filmscitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
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article
Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature
Abstract
<p>Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O<sub>2</sub> vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O<sub>2</sub> vol. %); whereas this transmittance was decreased with the increasing O<sub>2</sub> vol. % to as low as 81.04% (15.6 O<sub>2</sub> vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O<sub>2</sub> vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O<sub>2</sub> vol. % to as high as 3.91 eV (17.5 O<sub>2</sub> vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N<sub>2</sub>:H<sub>2</sub> gas atmosphere (17.5 O<sub>2</sub> vol. %).</p>