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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Pimentel, Ana
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Topics
Publications (15/15 displayed)
- 2022Enhanced Fe-TiO2 Solar Photocatalysts on Porous Platforms for Water Purificationcitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Tailoring Upconversion and Morphology of Yb/Eu Doped Y2O3 Nanostructures by Acid Composition Mediationcitations
- 2016Photocatalytic behavior of TiO2 films synthesized by microwave irradiationcitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
- 2010Manganese nitrate impregnation cycles optimization by addition of surfactants on Ta capacitors with high charge powders (>80000μC/G) manufacturing
- 2009Zinc oxide, a multifunctional material: from material to device applicationscitations
- 2008Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperaturecitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2006Electron transport and optical characteristics in amorphous indium zinc oxide filmscitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2005A Study on the Electrical Properties of ZnO Based Transparent TFTscitations
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article
Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature
Abstract
<p>Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O<sub>2</sub> vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O<sub>2</sub> vol. %); whereas this transmittance was decreased with the increasing O<sub>2</sub> vol. % to as low as 81.04% (15.6 O<sub>2</sub> vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O<sub>2</sub> vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O<sub>2</sub> vol. % to as high as 3.91 eV (17.5 O<sub>2</sub> vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N<sub>2</sub>:H<sub>2</sub> gas atmosphere (17.5 O<sub>2</sub> vol. %).</p>