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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marques, António
Universidade do Porto
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2008Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperaturecitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2005A Study on the Electrical Properties of ZnO Based Transparent TFTscitations
- 2002 Equipment to produce continuously powder coated thermoplastic matrix prepregs (towpregs)
- 2001Thin film metal oxide semiconductors deposited on polymeric substrates
- 2001Thin film metal oxide semiconductors deposited on polymeric substrates
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article
Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature
Abstract
<p>Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O<sub>2</sub> vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O<sub>2</sub> vol. %); whereas this transmittance was decreased with the increasing O<sub>2</sub> vol. % to as low as 81.04% (15.6 O<sub>2</sub> vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O<sub>2</sub> vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O<sub>2</sub> vol. % to as high as 3.91 eV (17.5 O<sub>2</sub> vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N<sub>2</sub>:H<sub>2</sub> gas atmosphere (17.5 O<sub>2</sub> vol. %).</p>