| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schamm-Chardon, Sylvie
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2023Fabrication of barium titanate nanopillars by neon ion milling
- 2023Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual latticecitations
- 2022Fabrication of barium titanate nanopillars by neon ion milling
- 2022Nano-composite MOx materials for NVMscitations
- 2021Fabrication by neon ion milling and characterization of barium titanate nanopillars
- 2019Structural and chemical investigation of interface related magnetoelectric effect in Ni/BiFe0.95Mn0.05O3 heterostructurescitations
- 2018Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopycitations
- 2018Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopycitations
- 2015A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applicationscitations
- 2014Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxycitations
- 2013Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer maskcitations
- 2011The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer depositioncitations
- 2011Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitorscitations
- 2011Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)citations
- 2011Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectricscitations
- 2010O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substratescitations
- 2009Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stackscitations
- 2009Localized Silicon Nanocrystals Fabricated by Stencil Masked Low Energy Ion Implantation: Effect of the Stencil Aperture Size on the Implanted Dose
- 2009Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materialscitations
- 2005Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantationcitations
- 2005Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applicationscitations
- 2005The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantationcitations
- 2005Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applicationscitations
- 2003Multi-scale analysis of the dielectric properties and structure of resin/carbon-black nanocompositescitations
- 2001Contamination and the quantitative exploitation of EELS low-loss experimentscitations
- 2001VUV absorption coefficient measurements of borate matricescitations
Places of action
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article
Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice
Abstract
International audience ; A method for the reciprocal space treatment of high-resolution transmission electron microscopy (HR-TEM) and high-resolution scanning transmission electron microscopy (HR-STEM) images has been developed. Named “Absolute strain” (AbStrain), it allows for quantification and mapping of interplanar distances and angles, displacement fields and strain tensor components with reference to a user-defined Bravais lattice and with their corrections from the image distortions specific to HR-TEM and HR-STEM imaging. We provide the corresponding mathematical formalism. AbStrain goes beyond the restriction of the existing method known as geometric phase analysis by enabling direct analysis of the area of interest without the need for reference lattice fringes of a similar crystal structure on the same field of view. In addition, for the case of a crystal composed of two or more types of atoms, each with its own sub-structure constraint, we developed a method named “Relative displacement” for extracting sub-lattice fringes associated to one type of atom and measuring atomic columns displacements associated to each sub-structure with reference to a Bravais lattice or to another sub-structure. The successful application of AbStrain and Relative displacement to HR-STEM images of functional oxide ferroelectric heterostructures is demonstrated.