| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Yang
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2024Spin injection in graphene using ferromagnetic indium-cobalt van der Waals contacts
- 2024Sensitivity of G0 and stress-strain relation of geomaterials to grain shape and surface roughness
- 2024Triple-junction perovskite–perovskite–silicon solar cells with power conversion efficiency of 24.4%
- 2023Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion sourcecitations
- 2023Near-surface characterization using Distributed Acoustic Sensing in an urban area: Granada, Spain
- 2023Bright circularly polarized photoluminescence in chiral layered hybrid lead-halide perovskitescitations
- 2023Evaporated Self‐Assembled Monolayer Hole Transport Layers: Lossless Interfaces in <i>p‐i‐n</i> Perovskite Solar Cellscitations
- 2023Silver contamination and its toxicity and risk management in terrestrial and aquatic ecosystemscitations
- 2022Fiber orientation dependence of tribological behavior of short carbon fiber reinforced ceramic matrix compositescitations
- 2022Elastic and inelastic mean free paths for scattering of fast electrons in thin-film oxidescitations
- 2021Premelting and formation of ice due to Casimir-Lifshitz interactions: Impact of improved parameterization for materials ; ENEngelskEnglishPremelting and formation of ice due to Casimir-Lifshitz interactions: Impact of improved parameterization for materialscitations
- 2021Exciton versus free carrier emission: Implications for photoluminescence efficiency and amplified spontaneous emission thresholds in quasi-2D and 3D perovskitescitations
- 2020Rapid and cytocompatible cell-laden silk hydrogel formation via riboflavin-mediated crosslinking
- 2020Rapid and cytocompatible cell-laden silk hydrogel formation via riboflavin-mediated crosslinkingcitations
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2019Volumetric Bioprinting of Complex Living-Tissue Constructs within Secondscitations
- 2018Magnetically activated microcapsules as controlled release carriers for a liquid PDMS cross-linkercitations
- 2016Transient phases during fast crystallization of organic thin films from solutioncitations
- 2014Design of anodic aluminum oxide rear surface plasmonic heterostructures for light trapping in thin silicon solar cellscitations
- 2012Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3gate stack: study of Ge auto-doping and p-type Zn doping
- 2009Lanthanide N,N '-piperazine-bis(methylenephosphonates) (Ln = La, Ce, Nd) that display flexible frameworks, reversible hydration and cation exchangecitations
- 2007Confinement of Thermoresponsive Hydrogels in Nanostructured Porous Silicon Dioxide Templatescitations
- 2007Confinement of Thermoresponsive Hydrogels in Nanostructured Porous Silicon Dioxide Templatescitations
- 2005Synthesis and characterization of CdS quantum dots in polystyrene microbeadscitations
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article
Elastic and inelastic mean free paths for scattering of fast electrons in thin-film oxides
Abstract
<p>Quantitative transmission electron microscopy (TEM) often requires accurate knowledge of sample thickness for determining defect density, structure factors, sample dimensions, electron beam and X-ray photons signal broadening. The most common thickness measurement is by Electron Energy Loss Spectroscopy which can be applied effectively to crystalline and amorphous materials. The drawback is that sample thickness is measured in units of Inelastic Mean Free Path (MFP) which depends on the material, the electron energy and the collection angle of the spectrometer. Furthermore, the Elastic MFP is an essential parameter for selecting optimal sample thickness to reduce dynamical scatterings, such as for short-range-order characterization of amorphous materials. Finally, the Inelastic to Elastic MFP ratio can predict the dominant mechanism for radiation damage due to the electron beam. We implement a fast and precise method for the extraction of inelastic and elastic MFP values in technologically important oxide thin films. The method relies on the crystalline Si substrate for calibration. The Inelastic MFP of Si was measured as a function of collection semi-angle (β) by combining Energy-Filtered TEM thickness maps followed by perpendicular cross-sectioning of the sample by Focused-Ion-Beam. For example, we measured a total Inelastic MFP (β∼157 mrad) in Si of 145 ± 10 nm for 200 keV electrons. The MFP of the thin oxide films is determined by their ratio at their interface with Si or SiO<sub>2</sub>. The validity of this method was verified by direct TEM observation of cross-to-cross sectioning of TEM samples. The high precision of this method was enabled mainly by implementing a wedge preparation technique, which provides large sampling areas with uniform thickness. We measured the Elastic and Inelastic Mean Free Paths for 200 keV and 80 keV electrons as a function of collection angle for: SiO<sub>2</sub> (Thermal, CVD), low-κ SiOCH, Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, ZnO, Ta<sub>2</sub>O<sub>5</sub> and HfO<sub>2</sub>. The measured MFP values were compared to calculations based on models of Wenzel, Malis and Iakoubovskii. These models deviate from measurements by up to 30%, especially for 80 keV electrons. Hence, we propose functional relations for the Elastic MFP and Inelastic MFP in oxides with respect to the mass density and effective atomic number, which reduce deviations by a factor of 2–3. In addition, the effects of sample cooling on the measurements and sample stability are examined.</p>