| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kusch, Gunnar
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cellscitations
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells.
- 20233D perovskite passivation with a benzotriazole-based 2D interlayer for high-efficiency solar cellscitations
- 2022Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
- 2022Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs 2 AgBiBr 6 Thin Films
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs<sub>2</sub>AgBiBr<sub>6</sub> Thin Filmscitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2019Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Self-healing thermal annealingcitations
Places of action
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article
Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope
Abstract
Understanding defects and their roles in plastic deformation and device reliability is important for the development of a wide range of novel materials for the next generation of electronic and optoelectronic devices. We introduce the use of gaseous secondary electron detectors in a variable pressure scanning electron microscope for non-destructive imaging of extended defects using electron channelling contrast imaging. We demonstrate that all scattered electrons, including the secondary electrons, can provide diffraction contrast as long as the sample is positioned appropriately with respect to the incident electron beam. Extracting diffraction information through monitoring the modulation of the intensity of secondary electrons as a result of diffraction of the incident electron beam, opens up the possibility of performing low energy electron channelling contrast imaging to characterise low atomic weight and ultra-thin film materials. Our methodology can be adopted for large area, nanoscale structural characterisation of a wide range of crystalline materials including metals and semiconductors, and we illustrate this using the examples of aluminium nitride and gallium nitride. The capability of performing electron channelling contrast imaging, using the variable pressure mode, extends the application of this technique to insulators, which usually require conducting coatings on the sample surface for traditional scanning electron microscope based microstructural characterisation.