• Altié, Alexandre
• Kang, Sueyeong
• Beaujard, Thomas
• Petit, Matthieu
• Michez, Lisa
• Cespedes, Oscar
• Hickey, Brian
• Heresanu, Vasile
• Bon, Ganaël

Abstract

Structural and magnetic properties of Mn5 (SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μB /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound.

Topics

• Deposition
• impedance spectroscopy
• surface
• compound
• x-ray diffraction
• thin film
• electron diffraction
• mass spectrometry
• dislocation
• Manganese
• crystallinity
• silicide