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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Cespedes, Oscar
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Topics
Publications (10/10 displayed)
- 2024Dual‐Material Aerosol Jet Printing of Magneto‐Responsive Polymers with In‐Process Tailorable Composition for Small‐Scale Soft Roboticscitations
- 2024Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin filmscitations
- 2023Magnetohydrodynamic Redeposition of Cations Onto the Anode
- 2020Iron(III), cobalt(II) and zinc(II) coordination compounds with a carboximidamide ligand: Synthesis, structures and propertiescitations
- 2017Emergent magnetism at transition-metal–nanocarbon interfacescitations
- 2017Emergent magnetism at transition-metal–nanocarbon interfacescitations
- 2017Emergent magnetism at transition-metal–nanocarbon interfacescitations
- 2015Beating the stoner criterion using molecular interfacescitations
- 2014One-pot synthesis of an inorganic heterostructure: uniform occlusion of magnetite nanoparticles within calcite single crystalscitations
- 2014Bio-inspired formation of functional calcite/metal oxide nanoparticle compositescitations
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article
Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films
Abstract
Structural and magnetic properties of Mn5 (SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μB /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound.