| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bakaimi, Ioanna
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024High throughput physical vapor deposition growth of Pb(Zr x Ti 1-x )O 3 perovskite thin films growth on silicon substratescitations
- 2024High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substratescitations
- 2018Combinatorial synthesis and screening of (Ba,Sr)(Ti,Mn)O3 thin films for optimization of tunable co-planar waveguidescitations
- 2018Incommensurate atomic and magnetic modulations in the spin-frustrated (β-NaMnO_2) triangular latticecitations
- 2016Manganese doped-iron oxide nanoparticle clusters and their potential as agents for magnetic resonance imaging and hyperthermiacitations
Places of action
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article
High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates
Abstract
The integration of lead zirconate titanate (Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub>) (PZT) compounds on Si substrates with a smooth surface would provide a key technology for silicon photonic devices. The quality of the deposited thin film is critical in order to integrate Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> on Si substrates for applications such as pyroelectric mid-infrared detectors or optical modulators. Here, we have applied physical vapour deposition technique using a modified molecular beam epitaxy tool to deposit perovskite Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> on Si and Pt substrates. We have developed a method to grow crack-free PZT films on Si substrates. The fabrication procedure entailed the use of TiO<sub>2</sub> as a buffer layer and post annealing of the PZT/TiO<sub>2</sub>/Si films under oxygen atmosphere. Cross section Scanning Electron Microscopy images enabled the identification of two distinct layers: PZT and TiO<sub>2</sub>, which was also confirmed by Spectroscopic Ellipsometry. X-Ray Diffraction patterns indicated the transition from the rhombohedral to the tetragonal phase and the formation of the perovskite phase of Pb(Zr<sub>0.44</sub>Ti<sub>0.56</sub>)O<sub>3</sub>.