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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Mitchell, Colin James
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
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Publications (2/2 displayed)
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article
High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates
Abstract
The integration of lead zirconate titanate (Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub>) (PZT) compounds on Si substrates with a smooth surface would provide a key technology for silicon photonic devices. The quality of the deposited thin film is critical in order to integrate Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> on Si substrates for applications such as pyroelectric mid-infrared detectors or optical modulators. Here, we have applied physical vapour deposition technique using a modified molecular beam epitaxy tool to deposit perovskite Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> on Si and Pt substrates. We have developed a method to grow crack-free PZT films on Si substrates. The fabrication procedure entailed the use of TiO<sub>2</sub> as a buffer layer and post annealing of the PZT/TiO<sub>2</sub>/Si films under oxygen atmosphere. Cross section Scanning Electron Microscopy images enabled the identification of two distinct layers: PZT and TiO<sub>2</sub>, which was also confirmed by Spectroscopic Ellipsometry. X-Ray Diffraction patterns indicated the transition from the rhombohedral to the tetragonal phase and the formation of the perovskite phase of Pb(Zr<sub>0.44</sub>Ti<sub>0.56</sub>)O<sub>3</sub>.