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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Laverock, Jude
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Composition-driven Mott transition within SrTi1 − x Vx O3
- 2024Surface modification of cellulose nanomaterials with amine functionalized fluorinated ionic liquids for hydrophobicity and high thermal stabilitycitations
- 2024Self-healing composite coating fabricated with a cystamine crosslinked cellulose nanocrystal stabilized Pickering emulsioncitations
- 2023Epitaxial stabilisation of uranium silicide line compoundscitations
- 2023Epitaxial stabilisation of uranium silicide line compoundscitations
- 2023Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuitscitations
- 2023Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuitscitations
- 2022Ex-situ Ge-doping of CZTS Nanocrystals and CZTSSe Solar Absorber Filmscitations
- 2022Ex situ Ge-doping of CZTS nanocrystals and CZTSSe solar absorber films.citations
- 2015Simultaneous spectroscopic, diffraction and microscopic study of the metal-insulator transition of VO2citations
- 2015Enhanced electron correlations at the SrxCa1-xVO3 surfacecitations
- 2014Direct observation of decoupled structural and electronic transitions and an ambient pressure monocliniclike metallic phase of VO2citations
- 2012Strain dependence of bonding and hybridization across the metal-insulator transition of VO 2citations
Places of action
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article
Epitaxial stabilisation of uranium silicide line compounds
Abstract
Epitaxial single crystal thin films of U3Si, U3Si5, 𝛼 − USi2, and USi3, alongside poly-crystalline U3Si2 have all been synthesised using DC magnetron sputtering. These idealised samples provide the bases on which fundamental studies can be conducted for the understanding of advanced technology fuel (ATF) candidates: U3Si, U3Si2, and U3Si5. The silicon-rich phases, USi2 and USi3 are of interest as intermediate oxidation products, forming as a result of the surface oxidation of the fuel candidates. Films were characterised using x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS), with XRD results indicating the stabilisation of [001]-oriented surfaces for all epitaxial phases with the exception of hexagonal U3Si5, which was found to be [100]-oriented. The XPS area analysis results from the U-4𝑓 and Si-2𝑠 core levels indicate that all phases are stoichiometric within error