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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Crunteanu, Aurelian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2022Structural and electrical properties of high-performance vanadium dioxide thin layers obtained by reactive magnetron sputteringcitations
- 2022High-quality deposition of vanadium dioxide (VO2) films using magnetron sputtering
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2019Texture and interface characterization of iridium thin films grown on MgO substrates with different orientationscitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2017Raman and XPS characterization of vanadium oxide thin films with temperaturecitations
- 2017Raman and XPS characterization of vanadium oxide thin films with temperaturecitations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 filmscitations
- 2016Microwave dielectric properties of pure and Mn-doped lead-free Na0.5Bi0.5TiO3 epitaxial thin films grown on (001) LaAlO3 single crystals using pulsed laser deposition
- 2016Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel techniquecitations
- 2016A study on controllable aluminum doped zinc oxide patterning by chemical etching for MEMS applicationcitations
- 2016Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmospherecitations
- 2016BST thin film capacitors integrated within a frequency tunable antenna
- 2015Strain and thickness dependence of the metal-insulator transition in VO2 epitaxial films
- 2015Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variationcitations
- 2015Lasing effects in new Nd3+-doped TeO2–Nb2O5–WO3 bulk glasses
- 2015Lasing effects in new Nd3+-doped TeO2–Nb2O5–WO3 bulk glasses
- 2015AlN, ZnO thin films and AlN/ ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave devicescitations
- 2012Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser depositioncitations
- 2012Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric propertiescitations
- 2012Structural, electrical and optical properties of thermochromic VO2 thin films obtained by reactive electron beam evaporationcitations
- 2010Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin filmscitations
- 2010Sub-hundred nanosecond electrostatic actuated RF MEMS switched capacitorscitations
- 2010A 380-420 MHz Two Pole tunable filter using new ferroelectric composite capacitors
- 2008RF microwave switches based on reversible metal semiconductor transition properties of VO2 thin films : an attractive way to realise simple RF microelectronic devicescitations
- 2007Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al2O3 matrixcitations
- 2005Optical and electrical properties of metal nanoclusters embedded in a dielectric medium
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article
Structural and electrical properties of high-performance vanadium dioxide thin layers obtained by reactive magnetron sputtering
Abstract
International audience ; Epitaxial vanadium dioxide (VO2) films exhibiting an abrupt metal-insulator transition with resistivity ratios of five orders of magnitude have been grown on (001)-oriented sapphire substrates by reactive magnetron sputtering. The influence of deposition and annealing temperature on the structure and morphology of the layers are discussed as well as their impact on the films’ electrical properties. Thus, the VO2 layers obtained using the optimal experimental conditions have electrical resistivity ratios over 105 and can be obtained on substrates as large as three-inch in diameter. The combination of the scalability of magnetron sputtering and the high quality of the films enables the large-scale industrial applications of high quality VO2 layers