| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tseng, Tseung-Yuen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Flower-like nanosheets FeCo2O4 for application in supercapacitor and dye-sensitized solar cellcitations
- 2021Synaptic behaviour of TiO x/HfO2RRAM enhanced by inserting ultrathin Al2O3layer for neuromorphic computingcitations
- 2021Transformation of digital to analog switching in TaO x -based memristor device for neuromorphic applicationscitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2020Facile and One-Step in Situ Synthesis of Pure Phase Mesoporous Li2MnSiO4/CNTs Nanocomposite for Hybrid Supercapacitorscitations
- 2020The synergistic effect of iron cobaltite compare to its single oxides as cathode in supercapacitorcitations
- 2020Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memorycitations
- 2019Synthesis of Free-Standing Flexible rGO/MWCNT Films for Symmetric Supercapacitor Applicationcitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
- 2017Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devicescitations
- 2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmscitations
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article
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
Abstract
<p>The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO<sub>2</sub>/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon.</p>