| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Eid, Jessica
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2017Planar heterojunction perovskite solar cell based on CdS electron transport layercitations
- 2016Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cellscitations
- 2015The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cellscitations
Places of action
| Organizations | Location | People |
|---|
article
Planar heterojunction perovskite solar cell based on CdS electron transport layer
Abstract
We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.