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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Abulikemu, Mutalifu
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Publications (3/3 displayed)
- 2017Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cellscitations
- 2017Planar heterojunction perovskite solar cell based on CdS electron transport layercitations
- 2016Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9citations
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article
Planar heterojunction perovskite solar cell based on CdS electron transport layer
Abstract
We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.