| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nashchekina, Olga
National Technical University "Kharkiv Polytechnic Institute"
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2021Percolation effects and self-organization processes in cold-pressed Bi2(Te1−xSex)3 solid solutionscitations
- 2020Transport properties of the bismuth telluride thin films with different stoichiometry in the temperature range 77-300 Kcitations
- 2020Size effects and thermoelectric properties of Bi0.98Sb0.02 thin films
- 2020Percolation transition and physical properties of Bi1-xSbx solid solutions at low Bi concentrationcitations
- 2019Thickness-dependent quantum oscillations of the transport properties in bismuth selenide thin filmscitations
- 2019Effect of Deviation from Stoichiometry on Thermoelectric Properties of Bi₂Te₃ Polycrystals and Thin Films in the Temperature Range 77-300 Kcitations
- 2019Percolation effects and self-organization processes in Bi₂(Te₁₋ₓSeₓ)₃ solid solutionscitations
- 2018Structure of thermally evaporated bismuth selenide thin filmscitations
- 2017Heat capacity and microhardness of the topological crystalline insulator Pb₁₋ₓSnₓTe near the band inversion compositioncitations
- 2016Growth and structure of thermally evaporated Bi2Te3 thin filmscitations
Places of action
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article
Growth and structure of thermally evaporated Bi2Te3 thin films
Abstract
The growth mechanism, microstructure, and crystal structure of the polycrystalline nBi2Te3 thin films with thicknesses d = 15 – 350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi2Te3. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5 – 2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi2Te3 thin films of a sufficiently high quality.