| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bhuiyan, A. H.
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Publications (5/5 displayed)
- 2021Understanding the enhancement of the optical and electronic attributes of iodine-doped vacuum deposited tetramethylaniline (PPTMA) thin film coatingscitations
- 2020Heat treatment effect on the structural, morphological, and optical properties of plasma polymerized furan-2-carbaldehyde thin filmscitations
- 2017Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin filmscitations
- 2016Understanding the charge carrier conduction mechanisms of plasma-polymerized 2-furaldehyde thin films via DC electrical studiescitations
- 2009Effect of salinity on dynamic dielectric properties of Sundori wood of Bangladesh
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article
Understanding the charge carrier conduction mechanisms of plasma-polymerized 2-furaldehyde thin films via DC electrical studies
Abstract
Monomer 2-furaldehyde (FDH) was deposited onto the glass substrates in optimum conditions via a glow discharge using a capacitively coupled parallel plate reactor to obtain plasma polymerized 2-furaldehyde (PPFDH) thin films of different thicknesses. In order to realize the carrier conduction mechanisms, the direct current density against applied voltage (J-V) characteristics of these films with different thicknesses were investigated at different temperatures (T) in the voltage region from 0.5 to 49 V in Al/PPFDH/Al sandwich configuration. The J-V characteristics at various temperatures follow a power law of the form J ∞ Vn. In the low voltage region the values of n were recorded to be 0.80 ≤ n ≤ 1.12 and those in the high voltage region found to lie between 1.91 ≤ n ≤ 2.58, demonstrating the Ohmic conduction mechanism in the low voltage region and non-Ohmic conduction in the high voltage region. Theoretically calculated and experimental results of Schottky (βs) and Poole-Frenkel (βPF) coefficients display that the most probable conduction mechanism in PPFDH thin films is the Schottky type. Arrhenius plots of J vs. 1/T for an applied voltage of 5 V, the activation energies were 0.13 ± 0.02 and 0.50 ± 0.05 eV in the low and high temperature regions, respectively. However, for an applied voltage of 35 V, the activation energy values were found to be 0.11 ± 0.01 eV and 0.55 ± 0.02 eV, respectively in low and high temperature regions.