| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kwietniewski, Norbert
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2022Performance of nanoimprinted and nanocoated optical label-free biosensor - nanocoating properties perspectivecitations
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2017Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stackscitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Filmscitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2010Measurements of Planar Metal -Dielectric Structures Using Split-Post Dielectric Resonatorscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2008Application of ZnO to passivate the GaN-based device structures
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
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article
Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor
Abstract
This work discusses the effect of sample suspension in radio frequency plasma-enhanced chemical vapor deposition process on properties of the obtained overlays. Silicon nitride (SiNx) overlays were deposited on flat silicon wafers and cylindrical fused silica optical fibers. The influence of the suspension height and fiber diameter on SiNx deposition rate is investigated. It has been found that thickness of the SiNx overlay significantly increases with suspension height, and the deposition rate depends on fiber dimensions. Moreover, the SiNx overlays were also deposited on long-period gratings (LPGs) induced in optical fiber. Measurements of the LPG spectral response combined with its numerical simulations allowed for a discussion on properties of the deposited overlay. The measurements have proven higher overlay deposition rate on the suspended fiber than on flat Si wafer placed on the electrode. Results of this work are essential for precise tuning of the functional properties of new generations of optical devices such as optical sensors, filters and resonators, which typically are based on optical fibers and require the overlays with well defined properties.