| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Filonovich, Sergej
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Maskless patterned plasma fabrication of interdigitated back contact silicon heterojunction solar cells: characterization and optimizationcitations
- 2018Blistering of Al2O3/a-SiNx:H stacks: analysis of the submerged part of the iceberg by colored picosecond acoustic microscopycitations
- 2017Blistering of Al2O3/a-SiNx:H stacks: analysis of the submerged part of the iceberg by colored picosecond acoustic microscopycitations
- 2017Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealingcitations
- 2015Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formationcitations
- 2015Hydrogenated nanocrystalline silicon thin films with promising thermoelectric propertiescitations
- 2014Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectorscitations
- 2013Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayerscitations
- 2013Role of a disperse carbon interlayer on the performances of tandem a-Si solar cellscitations
- 2012Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)(3)citations
- 2011Hybridsolar project: hybrid Si-Nanoparticle/polymer layers for solar cell applications
- 2009Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films
- 2006Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactorcitations
- 2002Microstructure and photoluminescence of CdS-doped silica films grown by RF magnetron sputtering
Places of action
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article
Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formation
Abstract
he p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions.