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| Naji, M. |
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Kukli, Kaupo
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Topics
Publications (35/35 displayed)
- 2024Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Filmscitations
- 2023Coatings Made by Atomic Layer Deposition for the Protection of Materials from Atomic Oxygen in Space
- 2022Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Depositioncitations
- 2022Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticlescitations
- 2022Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Depositioncitations
- 2022Structure and electrical behavior of hafnium-praseodymium oxide thin films Grown by atomic layer depositioncitations
- 2021Optical and mechanical properties of nanolaminates of zirconium and hafnium oxides grown by atomic layer depositioncitations
- 2020Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer depositioncitations
- 2020Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Filmscitations
- 2020Behavior of nanocomposite consisting of manganese ferrite particles and atomic layer deposited bismuth oxide chloride filmcitations
- 2019Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Filmscitations
- 2018Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxidescitations
- 2018Atomic Layer Deposition of Zirconium Dioxide from Zirconium Tetraiodide and Ozonecitations
- 2018Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Filmscitations
- 2018Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminatescitations
- 2018Atomic layer deposition and properties of ZrO2/Fe2O3 thin filmscitations
- 2017Luminescence properties of $mathrm{Er^{3+}}$ doped zirconia thin films and $mathrm{ZrO_2/Er_2O_3}$ nanolaminates grown by atomic layer depositioncitations
- 2016Atomic layer deposition of aluminum oxide on modified steel substratescitations
- 2016Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layerscitations
- 2015Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozonecitations
- 2015Mechanical properties of aluminum, zirconium, hafnium and tantalum oxides and their nanolaminates grown by atomic layer depositioncitations
- 2014Atomic layer deposition of Zr<scp>O</scp><sub>2</sub> for graphene‐based multilayer structures: <i>In situ</i> and <i>ex situ</i> characterization of growth processcitations
- 2014Modification of Hematite Electronic Properties with Trimethyl Aluminum to Enhance the Efficiency of Photoelectrodescitations
- 2014Holmium and titanium oxide nanolaminates by atomic layer depositioncitations
- 2012Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Filmscitations
- 2011Crystal structures and thermal properties of some rare earth alkoxides with tertiary alcoholscitations
- 2010High temperature atomic layer deposition of Ruthenium from N,N-dimethyl-1-ruthenocenylethylaminecitations
- 2010Atomic layer deposition and characterization of zirconium oxide-erbium oxide nanolaminatescitations
- 2009Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursorscitations
- 2009Atomic layer deposition of high-k oxides of the group 4 metals for memory applicationscitations
- 2009Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer depositioncitations
- 2009Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectricscitations
- 2008Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devicescitations
- 2006Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide filmscitations
- 2005Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and watercitations
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article
Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone
Abstract
<p>ZrO2 films were grown by atomic layer deposition using ZrCl4 and O-3 as precursors. The films were grown on silicon substrates in the temperature range of 220-500 degrees C. The ALD rate was monotonously decreasing from 0.085 to 0.060 nm/cycle in this temperature range towards the highest temperatures studied. The content of chlorine in the films did not exceed 0.2 at.% as measured by elastic recoil detection analysis. The content of hydrogen was 0.30 and 0.14 at.% in the films grown at 300 and 400 degrees C, respectively. Structural studies revealed the films consisting of mixtures of stable monoclinic and metastable tetragonal/cubic polymorphs of ZrO2, and dominantly metastable phases of ZrO2 below and above 300 degrees C, respectively. Permittivity of dielectric layers in Al/Ti/ZrO2/(TiN/)Si capacitors with 15-40 nm thick ZrO2 ranged between 12 and 25 at 100 kHz and the dielectric breakdown fields were in the range of 1.5-3.0 MV/cm. (C) 2015 Elsevier B.V. All rights reserved.</p>