Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Gendre, Laurent Le

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (14/14 displayed)

  • 2021Perovskite (Sr<sub>2</sub>Ta<sub>2</sub>O<sub>7</sub>)<sub>100−x</sub>(La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>)<sub>x</sub> ceramics: From dielectric characterization to dielectric resonator antenna applications30citations
  • 2017Deposition and dielectric study as function of thickness of perovskite oxynitride SrTaO<sub>2</sub>N thin films elaborated by reactive sputtering6citations
  • 2017Ferroelectric and dielectric study of strontium tantalum based perovskite oxynitride films deposited by reactive rf magnetron sputtering13citations
  • 2015Waste-​glass recycling: A step toward microwave applications33citations
  • 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin films3citations
  • 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization14citations
  • 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputtering7citations
  • 2012Dielectric oxynitride LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive radio-frequency sputtering7citations
  • 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequencies11citations
  • 2010Oxynitrides Perovskites Thin Films : Photoelectrochemical Measurement Under Visible Lightcitations
  • 2009Photoelectrochemical Properties of Crystalline Perovskite Lanthanum Titanium Oxynitride Films under Visible Light.120citations
  • 2008Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films25citations
  • 2007Oxynitride perovskite LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive sputtering37citations
  • 2005Thermochemistry of a New Class of Materials Containing Dinitrogen Pairs in an Oxide Matrix54citations

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Chart of shared publication
Cheviré, François
10 / 63 shared
Benzerga, Ratiba
9 / 47 shared
Paven, Claire Le
3 / 3 shared
Chevalier, Alexis
1 / 21 shared
Haydoura, Mohamad
1 / 5 shared
Sharaiha, A.
1 / 11 shared
Tessier, Franck
13 / 57 shared
Laur, Vincent
3 / 25 shared
Marlec, Florent
2 / 17 shared
Sharaiha, Ala
8 / 38 shared
Gam, F.
1 / 2 shared
Desfeux, Rachel
1 / 39 shared
Saitzek, Sébastien
1 / 18 shared
Fasquelle, Didier
4 / 34 shared
Castel, Xavier
3 / 22 shared
Ferri, Anthony
1 / 40 shared
Queffelec, Patrick
1 / 23 shared
Genty, Sébastien
1 / 5 shared
Lebullenger, Ronan
1 / 27 shared
Députier, Stéphanie
1 / 29 shared
Delaveaud, Christophe
1 / 15 shared
Nguyen, Hoaï-Nam
1 / 2 shared
Lu, Yu
4 / 17 shared
Paven-Thivet, Claire Le
9 / 9 shared
Rioual, Stéphane
1 / 15 shared
Nguyen, H. V.
1 / 6 shared
Delaveaud, C.
1 / 2 shared
Benzegoutta, Dhafira
1 / 3 shared
Ziani, Ahmed
5 / 11 shared
Carru, Jean-Claude
3 / 24 shared
Vigneras, Valerie
1 / 2 shared
Kassem, Hussein
1 / 2 shared
Yoshida, Masaaki
2 / 3 shared
Domen, Kazunari
2 / 7 shared
Ishikawa, Akio
2 / 3 shared
Kubota, Jun
2 / 4 shared
Pinel, Jacques
2 / 4 shared
Castrec, Jérome Le
1 / 1 shared
Marchand, R.
1 / 10 shared
Navrotsky, A.
1 / 4 shared
Chart of publication period
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Co-Authors (by relevance)

  • Cheviré, François
  • Benzerga, Ratiba
  • Paven, Claire Le
  • Chevalier, Alexis
  • Haydoura, Mohamad
  • Sharaiha, A.
  • Tessier, Franck
  • Laur, Vincent
  • Marlec, Florent
  • Sharaiha, Ala
  • Gam, F.
  • Desfeux, Rachel
  • Saitzek, Sébastien
  • Fasquelle, Didier
  • Castel, Xavier
  • Ferri, Anthony
  • Queffelec, Patrick
  • Genty, Sébastien
  • Lebullenger, Ronan
  • Députier, Stéphanie
  • Delaveaud, Christophe
  • Nguyen, Hoaï-Nam
  • Lu, Yu
  • Paven-Thivet, Claire Le
  • Rioual, Stéphane
  • Nguyen, H. V.
  • Delaveaud, C.
  • Benzegoutta, Dhafira
  • Ziani, Ahmed
  • Carru, Jean-Claude
  • Vigneras, Valerie
  • Kassem, Hussein
  • Yoshida, Masaaki
  • Domen, Kazunari
  • Ishikawa, Akio
  • Kubota, Jun
  • Pinel, Jacques
  • Castrec, Jérome Le
  • Marchand, R.
  • Navrotsky, A.
OrganizationsLocationPeople

article

Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

  • Rioual, Stéphane
  • Gendre, Laurent Le
  • Cheviré, François
  • Benzerga, Ratiba
  • Castel, Xavier
  • Lu, Yu
  • Paven-Thivet, Claire Le
  • Tessier, Franck
  • Nguyen, H. V.
  • Sharaiha, Ala
  • Delaveaud, C.
  • Benzegoutta, Dhafira
Abstract

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO3 and Pt(111)/TiO2/SiO2/(001) Si substrates by RF magnetron sputtering, using a La2Ti2O7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 degrees C display a crystalline growth different than those reported on monoclinic ferroelectric La2Ti2O7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti4+ ions, with no trace of Ti3+, and provides a La/Ti ratio of 1.02. The depositions being performed from a La2Ti2O7 target under oxygen rich plasma, the same composition (La2Ti2O7) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2(1) space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1-20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La2Ti2O7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La2Ti2O7 films is epsilon similar to 60 and the losses are low (tan delta < 0.02)

Topics
  • Deposition
  • perovskite
  • impedance spectroscopy
  • compound
  • phase
  • thin film
  • x-ray photoelectron spectroscopy
  • Oxygen
  • dielectric constant
  • reactive
  • Lanthanum
  • titanium
  • space group