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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lu, Yu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2022The influence of thermal oxidation on the microstructure, fatigue properties, tribological and in vitro behaviour of laser powder bed fusion manufactured Ti-34 Nb-13Ta-5Zr-0.2O alloycitations
- 2022Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxidescitations
- 2019Modelling of the heat-affected and thermomechanically affected zones in a Ti-6Al-4V inertia friction weldcitations
- 2014La2Ti2O7 perovskite compound: from thin film deposition to notch antenna miniaturization
- 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin filmscitations
- 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin filmscitations
- 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterizationcitations
- 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterizationcitations
- 2014Functional dielectric oxide and oxynitride perovskite thin films deposited by reactive magnetron sputtering
- 2013Reactive Sputtering Deposition of Perovskite Oxide and Oxynitride Lanthanum Titanium Films: Structural and Dielectric Characterizationcitations
- 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputteringcitations
- 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputteringcitations
- 2013A new lanthanum titanium oxide perovskite compound: thin film deposition and dielectric characterization.
- 2013Functional dielectric oxide and oxynitride compounds in the perovskite La-Ti-O-N system: from thin film sputtering deposition to dielectric characterization
- 2012Processing, crystallization behavior and dielectric performance of perovskite LaTiO x N y thin films
- 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequenciescitations
- 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequenciescitations
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article
Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization
Abstract
Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO3 and Pt(111)/TiO2/SiO2/(001) Si substrates by RF magnetron sputtering, using a La2Ti2O7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 degrees C display a crystalline growth different than those reported on monoclinic ferroelectric La2Ti2O7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti4+ ions, with no trace of Ti3+, and provides a La/Ti ratio of 1.02. The depositions being performed from a La2Ti2O7 target under oxygen rich plasma, the same composition (La2Ti2O7) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2(1) space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1-20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La2Ti2O7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La2Ti2O7 films is epsilon similar to 60 and the losses are low (tan delta < 0.02)