| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sürgers, Christoph
Karlsruhe Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (27/27 displayed)
- 2024Lateral Mn$_5$Ge$_3$ spin-valve in contact with a high-mobility Ge two-dimensional hole gas
- 2021Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layerscitations
- 2021Minority-spin conduction in ferromagnetic Mn$_5$Ge$_3$C$_x$ and Mn$_5$Si$_3$C$_x$ films derived from anisotropic magnetoresistance and density functional theory
- 2021Resolving the spin polarization and magnetic domain wall width of (Nd,Dy)$_{2}$Fe$_{14}$B with spin-polarized scanning tunneling microscopycitations
- 2016Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3citations
- 2016Two-band superconductivity of bulk and surface states in Ag thin films on Nbcitations
- 2015Cu-doped nitrides: Promising candidates for a nitride based spin-alignercitations
- 2015Magnetotransport in ferromagnetic Mn₅Ge₃, Mn₅Ge₃C₀̣₈ and Mn₅Si₃C₀̣₈ thin filmscitations
- 2015Search for universality of the density of states of low-energy excitations in amorphous metals
- 2015Growth of Pd4S, PdS and PdS2 films by controlled sulfurization of sputtered Pd on native oxide of Sicitations
- 2015Proximity effect between superconductors and ferromagnetscitations
- 2015Magnetic properties of Cu-doped GaN grown by molecular beam epitaxycitations
- 2014Magnetotransport in ferromagnetic Mn₅Ge₃, Mn₅Ge₃C₀̣₈ and Mn₅Si₃C₀̣₈ thin filmscitations
- 2013Low temperature thermoelectric properties of Cu intercalated TiSe2: a charge density wave materialcitations
- 2013Ferromagnetic Mn 5Ge3C0.8 contacts on Ge: work function and specific contact resistivitycitations
- 2013Growth of Pd4S, PdS and PdS2 films by controlled sulfurization of sputtered Pd on native oxide of Sicitations
- 2013Thermoelectric performance of Cu intercalated layered TiSe2 above 300 Kcitations
- 2012Magnetic properties of Cu-doped GaN grown by molecular beam epitaxycitations
- 2011Cu-doped nitrides: Promising candidates for a nitride based spin-alignercitations
- 2009Poly(3-hexylthiophene) based field-effect transistors with gate SiO2 dielectric modified by multi-layers of 3-aminopropyltrimethoxysilanecitations
- 2008Manganese hyperfine interaction in intermetallic Mn compoundscitations
- 2008Effect of substrate temperature on the microstructure of thin niobium filmscitations
- 2008Growth and characterization of Nb/Gd multilayers for different substrate temperaturescitations
- 2008Heavy-fermion behavior and spin-glass freezing in Si-stabilized amorphous alloys based on UPt3citations
- 2008Electronic transport in magnetically ordered Mn₅Si₃Cₓ filmscitations
- 2007Proximity effect between superconductors and ferromagnetscitations
- 2001Manganese hyperfine interaction in intermetallic Mn compoundscitations
Places of action
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article
Growth of Pd4S, PdS and PdS2 films by controlled sulfurization of sputtered Pd on native oxide of Si
Abstract
hin films of different Pd–S phase, namely Pd4S, PdS and PdS2, have been reproducibly grown by the sulfurization of Pd films deposited on native oxide of (111) Si substrates by radio frequency sputtering method. In order to achieve controlled sulfurization, a three-stage sulfurization setup consisting of evaporation chamber, activation chamber and sulfurization chamber has been developed. The sulfurization of Pd films (kept at a constant temperature of 500 °C) was carried out using sulfur vapors activated to different temperature between 550 and 700 °C. The results of X-ray diffraction and X-ray photoelectron spectroscopy measurements show that formation of Pd4S, PdS and PdS2 phases takes place for the activation temperatures of 550, 600 and 700 °C, respectively. The room temperature resistivity of Pd, Pd4S, PdS and PdS2 were found to be respectively 0.1, 15.9, 15,000 and 20,000 μΩ cm. The temperature-dependent electrical resistivity measurements showed metallic conduction for Pd and Pd4S films. The Seebeck coefficient measured at 300 K for these Pd–S phases showed their n-type conducting behavior.