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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giusti, G.
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Publications (5/5 displayed)
- 2018Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer depositioncitations
- 2015Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applicationscitations
- 2013Electrically conductive epoxy nanocomposites containing carbonaceous fillers and in-situ generated silver nanoparticlescitations
- 2012Dielectric properties of pulsed-laser deposited indium tin oxide thin filmscitations
- 2009Microstructure–property relationships in thin film ITOcitations
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article
Dielectric properties of pulsed-laser deposited indium tin oxide thin films
Abstract
Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition with an ITO (In<sub>2</sub>O<sub>3</sub>-10 wt.% SnO<sub>2</sub>) ceramic target and deposited on transparent borosilicate glass substrates between room temperature (RT) and 400 °C. The RT grown specimen was structurally investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy and X-Ray Diffraction. It contained both amorphous and crystalline phases. The electro-optical properties of the RT-grown sample were almost similar to those of the samples grown at higher temperatures. Finally, Scanning Transmission Electron Microscopy–Valence Electron Energy Loss Spectroscopy was used to derive locally dielectric properties which were compared with ellipsometry measurements in the 1.5–5.5 eV range using a Tauc–Lorentz model.