| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Siebentritt, Susanne
University of Luxembourg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Composition dependence of electronic defects in CuGaS2citations
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2023Chalcopyrite solar cells —state-of-the-art and options for improvementcitations
- 2023On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se2citations
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2023CuIn(Se,Te)2 absorbers with bandgaps <1 eV for bottom cells in tandem applications
- 2022Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cellscitations
- 2022How much gallium do we need for a p-type Cu(In,Ga)Se<sub>2</sub>?citations
- 2021Passivating Surface Defects and Reducing Interface Recombination in CuInS<sub>2</sub> Solar Cells by a Facile Solution Treatmentcitations
- 2021The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cellscitations
- 2020Oxidation as Key Mechanism for Efficient Interface Passivation in Cu (In,Ga)Se2 Thin-Film Solar Cells
- 2020Ultra-thin passivation layers in Cu(In,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping
- 2016Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4 : Theoretical and experimental investigationscitations
- 2015Epitaxial Cu2ZnSnSe4 thin films and devicescitations
- 2014Single second laser annealed CuInSe2 semiconductors from electrodeposited precursors as absorber layers for solar cellscitations
- 2012Thin film solar cells based on the ternary compound Cu2SnS3citations
- 2008Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8citations
Places of action
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article
Thin film solar cells based on the ternary compound Cu2SnS3
Abstract
Alongside with Cu2ZnSnS4 and SnS, the p-type semiconductor Cu2SnS3 also consists of only Earth abundant and low-cost elements and shows comparable opto-electronic properties, with respect to Cu2ZnSnS4 and SnS, making it a promising candidate for photovoltaic applications of the future. In this work, the ternary compound has been produced via the annealing of an electrodeposited precursor in a sulfur and tin sulfide environment. The obtained absorber layer has been structurally investigated by X-ray diffraction and results indicate the crystal structure to be monoclinic. Its optical properties have been measured via photoluminescence, where an asymmetric peak at 0.95 eV has been found. The evaluation of the photoluminescence spectrum indicates a band gap of 0.93 eV which agrees well with the results from the external quantum efficiency. Furthermore, this semiconductor layer has been processed into a photovoltaic device with a power conversion efficiency of 0.54%, a short circuit current of 17.1 mA/cm2, an open circuit voltage of 104 mV hampered by a small shunt resistance, a fill factor of 30.4%, and a maximal external quantum efficiency of just less than 60%. In addition, the potential of this Cu2SnS3 absorber layer for photovoltaic applications is discussed.