| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mkhoyan, K. Andre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Optical Properties of Electrochemically Gated La 1− xSr xCoO 3−δ as a Topotactic Phase-Change Materialcitations
- 2023Anomalous strain relaxation and its impact on the valence-driven spin-state/metal-insulator transition in epitaxial (Pr1−yYy)1−xCaxCoO3−δcitations
- 2023Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence
- 2021Spin and Charge Interconversion in Dirac-Semimetal Thin Filmscitations
- 2020Layer Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly Anisotropic Black Ascitations
- 2020Ambipolar transport in van der Waals black arsenic field effect transistorscitations
- 2020Plasmonic nanocomposites of zinc oxide and titanium nitridecitations
- 2020Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformationscitations
- 2020Thermal transport in ZnO nanocrystal networks synthesized by nonthermal plasmacitations
- 2018Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) filmscitations
- 2015Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin-Orbit Coupling of Topological Insulator Bi2Se3citations
- 2015Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinementcitations
- 2015Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3citations
- 2012Sputter deposition of semicrystalline tin dioxide filmscitations
- 2012Improving the damp-heat stability of copper indium gallium diselenide solar cells with a semicrystalline tin dioxide overlayercitations
- 2010Orientation and morphological evolution of catalyst nanoparticles during carbon nanotube growthcitations
- 2010Effect of hydrogen on catalyst nanoparticles in carbon nanotube growthcitations
Places of action
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article
Sputter deposition of semicrystalline tin dioxide films
Abstract
<p>Tin dioxide is emerging as an important material for use in copper indium gallium diselenide based solar cells. Amorphous tin dioxide may be used as a glass overlayer for covering the entire device and protecting it against water permeation. Tin dioxide is also a viable semiconductor candidate to replace the wide band gap zinc oxide window layer to improve the long-term device reliability. The film properties required by these two applications are different. Amorphous films have superior water permeation resistance while polycrystalline films generally have better charge carrier transport properties. Thus, it is important to understand how to tune the structure of tin dioxide films between amorphous and polycrystalline. Using X-ray diffraction (XRD) and Hall-effect measurements, we have studied the structure and electrical properties of tin dioxide films deposited by magnetron sputtering as a function of deposition temperature, sputtering power, feed gas composition and film thickness. Films deposited at room temperature are semicrystalline with nanometer size SnO <sub>2</sub> crystals embedded in an amorphous matrix. Film crystallinity increases with deposition temperature. When the films are crystalline, the X-ray diffraction intensity pattern is different than that of the powder diffraction pattern indicating that the films are textured with (101) and (211) directions oriented parallel to the surface normal. This texturing is observed on a variety of substrates including soda-lime glass (SLG), Mo-coated soda-lime glass and (100) silicon. Addition of oxygen to the sputtering gas, argon, increases the crystallinity and changes the orientation of the tin dioxide grains: (110) XRD intensity increases relative to the (101) and (211) diffraction peaks and this effect is observed both on Mo-coated SLG and (100) silicon wafers. Films with resistivities ranging between 8 mω cm and 800 mω cm could be deposited. The films are n-type with carrier concentrations in the 3 × 10 <sup>18</sup> cm <sup>- 3</sup> to 3 × 10 <sup>20</sup> cm <sup>- 3</sup> range. Carrier concentration decreases when the oxygen concentration in the feed gas is above 5%. Electron mobilities range from 1 to 7 cm <sup>2</sup>/V s and increase with increasing film thickness, oxygen addition to the feed gas and film crystallinity. Electron mobilities in the 1-3 cm <sup>2</sup>/V s range can be obtained even in semicrystalline films. Initial deposition rates range from 4 nm/min at low sputtering power to 11 nm/min at higher powers. However, deposition rate decreases with deposition time by as much as 30%.</p>