| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Belmahi, Mohammed
Université de Lorraine
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2016Optimizing the sputter deposition process of polymers for the Storing Matter technique using PMMAcitations
- 2014Experimental and Numerical Study of Submonolayer Sputter Deposition of Polystyrene Fragments on Silver for the Storing Matter Techniquecitations
- 2014Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H-2/N-2/Ar/Hexamethyldisilazane Gas Mixturecitations
- 2014Fragmentation of polystyrene during sputter deposition in the storing matter instrumentcitations
- 2013Study of the chemical etching of carbon surfaces facing argon/hydrogen plasmas in a helicon type reactor
- 2011The influence of CH(4) addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH(4)/N(2)/Ar/hexamethyldisilazane microwave plasmacitations
- 2011The influence of CH(4) addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH(4)/N(2)/Ar/hexamethyldisilazane microwave plasmacitations
- 2007Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Filmscitations
Places of action
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article
The influence of CH(4) addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH(4)/N(2)/Ar/hexamethyldisilazane microwave plasma
Abstract
Amorphous silicon carbonitride (a-SiCN) thin films were synthesized in a microwave plasma assisted chemical vapor deposition system using N2, Ar, CH4 and hexamethyldisilazane vapor (HMDSN). Composition, morphology and optical constants of the layers have been studied as a function of CH4 rate in the range 0 to 9%. It was found that films are mainly composed of silicon nitride like compound whatever the CH4 rate. However, CH4 addition leads to less hydrogenated and denser films. In addition, a refractive index augmentation from 1.7 to 2.0 and a Tauc gap decrease from 5.2 eV to 4.8 eV is measured with CH4 rate increase. It is believed that the refractive index augmentation is due to higher thin film density whereas hydrogen bonds decrease is assumed to contribute to the band gap narrowing. Besides, CH4 addition to the gaseous mixture increases thin film oxidation resistance. These results show the ability of varying composition, structure and optical constants of a-SiCN films by modifying CH4 rate in a N2/Ar/HMDSN plasma.