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Nagaich, Kushagra
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article
An analysis of temperature dependent current-voltage characteristics of Cu2O-ZnO heterojunction solar cells
Abstract
<p>Carrier transport and recombination mechanisms in Cu<sub>2</sub>O-ZnO heterojunction thin film solar cells were investigated through an analysis of their current-voltage characteristics in the dark and under various illumination intensities, as a function of temperature between 100 K and 295 K. The Cu <sub>2</sub>O-ZnO heterojunction solar cells were prepared by metal organic chemical vapor deposition of Cu<sub>2</sub>O on ZnO films sputtered on transparent conducting oxide coated glass substrates. Activation energies extracted from the temperature dependence of the J-V characteristics reveals that interface recombination is the dominant carrier transport mechanism. Tunneling across an interfacial barrier also plays an important role in current flow and a thin TiO<sub>2</sub> buffer layer reduces tunneling. A high open circuit voltage at low temperature (∼ 0.9 V at around 100 K) indicates that Cu<sub>2</sub>O-ZnO heterojunction solar cells have high potential as solar cells if the recombination and tunneling at the interface can be suppressed at room temperature.</p>