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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Paven-Thivet, Claire Le
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Topics
Publications (9/9 displayed)
- 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin filmscitations
- 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterizationcitations
- 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputteringcitations
- 2012Dielectric oxynitride LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive radio-frequency sputteringcitations
- 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequenciescitations
- 2010Oxynitrides Perovskites Thin Films : Photoelectrochemical Measurement Under Visible Light
- 2009Photoelectrochemical Properties of Crystalline Perovskite Lanthanum Titanium Oxynitride Films under Visible Light.citations
- 2008Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin filmscitations
- 2007Oxynitride perovskite LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive sputteringcitations
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article
Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequencies
Abstract
Lanthanum titanium oxynitride (LaTiOxNy) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiOxNy thin films deposited on conductive single crystal Nb-STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiOxNy polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO2/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiOxNy films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).