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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Klee, M.
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Publications (4/4 displayed)
- 2010BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substratescitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
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article
BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substrates
Abstract
Nanocrystalline barium strontium titanate (BaxSr1−xTi1.02O3) thin films with a barium content of x=0.8, 0.9 and 1 have been fabricated in a metal–insulator–metal configuration on glass-planarized alumina substrates. Cost-effective processing measures have been utilized by using poly-crystalline alumina substrates, wetchemical processing of the dielectric, and by a small physical area of the ferroelectric capacitors (as low as 50 μm2 for radio frequencies measurements). Glass-planarization on alumina ceramic substrates enables barium strontium titanate films with high quality and homogeneity. We mainly focus on fine-tuning the electrical performance in the low gigahertz range (<10 GHz). Extensive micro-structural and electrical characterization has been performed. Micro-structural information is obtained by: Transmission Electron Microscopy, Scanning Electron Microscopy and X-ray diffraction. The dielectric response is investigated as a function of temperature, frequency and electric field for each sample. We measured a relatively constant permittivity for typical operating temperatures of applications. The quality factor Q is between 21 and 27 at 1 GHz at zero DC bias and the tuning ratio η between 1.8 and 2.2 at |E|=0.4 MV/cm.