| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giusti, G.
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Publications (5/5 displayed)
- 2018Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer depositioncitations
- 2015Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applicationscitations
- 2013Electrically conductive epoxy nanocomposites containing carbonaceous fillers and in-situ generated silver nanoparticlescitations
- 2012Dielectric properties of pulsed-laser deposited indium tin oxide thin filmscitations
- 2009Microstructure–property relationships in thin film ITOcitations
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article
Microstructure–property relationships in thin film ITO
Abstract
Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) with an ITO (In<sub>2</sub>O<sub>3</sub>-10 wt.% SnO<sub>2</sub>) target and deposited on borosilicate glass substrates. By changing independently the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. These different microstructures were mainly investigated not only by transmission electron microscopy (TEM) with cross-section and plan-view electron micrographs, but also by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction. Composition changes in ITO thin films grown under different deposition conditions were characterized by energy dispersive X-ray spectroscopy (EDX). The optical and electrical properties were studied respectively by UV-visible spectrophotometry and a four-point probe. The best compromise in terms of high transmittance (<i>T</i>) in the visible range and low resistivity (<i>ρ</i>) was obtained for films deposited between 0.66 and 2Pa oxygen pressure (<i>P</i><sub>O</sub><sub>2</sub>) at 200 °C substrate temperature (<i>T</i><sub>s</sub>). The influence of <i>P</i><sub>O</sub><sub>2</sub> and <i>T</i><sub>s</sub>on the microstructure and ITO film properties is discussed.