693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Paven-Thivet, Claire Le
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin filmscitations
- 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterizationcitations
- 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputteringcitations
- 2012Dielectric oxynitride LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive radio-frequency sputteringcitations
- 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequenciescitations
- 2010Oxynitrides Perovskites Thin Films : Photoelectrochemical Measurement Under Visible Light
- 2009Photoelectrochemical Properties of Crystalline Perovskite Lanthanum Titanium Oxynitride Films under Visible Light.citations
- 2008Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin filmscitations
- 2007Oxynitride perovskite LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive sputteringcitations
Places of action
| Organizations | Location | People |
|---|
article
Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films
Abstract
Oxynitride LaTiOxNy films have been deposited by sputtering with substrate temperature =[800−900 °C] and nitrogen ratio in the plasma =[0−71%]. Distinct nitrogen amounts in films were measured, in agreement with the observed variation of the bang-gap, from Eg=3.45 eV for the transparent film to Eg=2.20 eV for the coloured nitrogen-rich film. The films are polycrystalline, (00l) oriented or epitaxially grown on Nb-doped SrTiO3 substrates. The dielectric constant ε' decreases with increasing nitrogen amount and polycrystalline character of films. The ε' values are high, ranging from 290 to 1220 (room temperature, 10 kHz).