| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Raniero, Leandro
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Topics
Publications (10/10 displayed)
- 2008Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputteringcitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2007Amorphous/nanocrystalline silicon biosensor for the specific identification of unamplified nucleic acid sequences using gold nanoparticle probescitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2006Characterization of nanocrystalline silicon carbide filmscitations
- 2006Electrical properties of amorphous and nanocrystalline hydrogenated silicon films obtained by impedance spectroscopycitations
- 2006Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cellscitations
- 2005Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHzcitations
- 2005Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.citations
- 2004Characterization of silicon carbide thin films prepared by VHF-PECVD technologycitations
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article
Electrical properties of amorphous and nanocrystalline hydrogenated silicon films obtained by impedance spectroscopy
Abstract
Nanocrystalline hydrogenated silicon (nc-Si:H) thin films are generally accepted to be a two phase material-Si crystalline and Si:H amorphous. This work reports the use of impedance spectroscopy to determine the amorphous and crystalline electrical conductivity of a/nc-Si:H films obtained by hot wire chemical vapour deposition. Different relaxation time or time constants are detected, if the film is composed by inhomogeneous material, by measuring ac impedance in a wide range of frequencies. Relating the conduction mechanism of the film to a series of two RC circuits constituted by a resistance and a capacitor in parallel, we may determine distinct ac conductivities and correlate that to the crystalline, amorphous and interface components. The amorphous films analysed exhibit one ac conductivity component while for nanocrystalline films two ac conductivity components are observed. The average value of ac conductivities is in agreement with that of dc conductivity.