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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Colligon, J. S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2011Amorphous boron containing silicon carbo-nitrides created by ion sputteringcitations
- 2010Comparison of Ti-Zr-V nonevaporable getter films deposited using alloy or twisted wire sputter-targetscitations
- 2006Influence of mechanical properties on the nanoscratch behaviour of hard nanocomposite TiN/Si3N4 coatings on Sicitations
- 2005Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam methodcitations
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article
Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam method
Abstract
<p>A dual ion beam system is used to produce hard nanocomposite TiN/Si <sub>3</sub>N<sub>4</sub> coatings on Si. Cross-sectional high resolution transmission electron microscopy analysis of the coatings shows that ion assistance causes microstructure to change from the non-assisted columnar form to one where there are small crystals present in an amorphous percolation network. For an unheated Si substrate, the microhardness increases with increasing ion-assist energy from 24 to 29 GPa, whereas for a deposition substrate at 400 °C, the microhardness values are 7-8 GPa or higher. The value of microhardness does not change even when coatings are annealed in vacuum at 1000 °C, showing that these coatings have high thermal stability. X-ray photoelectron spectroscopy data indicate that the -Ti-N-Si- bonds expected when the percolation network is formed are present only for substrate temperatures above 600 °C and that Ti-Si bonds form at lower temperature and during excess ion bombardment.</p>