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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Maroudas, Dimitrios
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2005The role of SiH3 diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films
- 2005Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin filmscitations
- 2005Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfacescitations
- 2004Surface Processes during Growth of Hydrogenated Amorphous Siliconcitations
- 2002Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfacescitations
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article
Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces
Abstract
<p>Interactions of SiH<sub>3</sub> radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH<sub>3</sub> radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH<sub>3</sub> insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH<sub>3</sub> adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH<sub>3</sub> and the temperature dependent smoothening mechanism of a-Si:H thin films.</p>