| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vähänissi, Ville
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (43/43 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Status report on emerging photovoltaicscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2021Efficient photon capture on germanium surfaces using industrially feasible nanostructure formationcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2020Modeling Field-effect in Black Silicon and its Impact on Device Performancecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Siliconcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2018Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cellscitations
- 2018Rapid thermal anneal activates light induced degradation due to copper redistributioncitations
- 2017Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Getteringcitations
- 2017Toward Effective Gettering in Boron-Implanted Silicon Solar Cellscitations
- 2017Full recovery of red zone in p-type high-performance multicrystalline siliconcitations
- 2017Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stackscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2014Iron Precipitation upon Gettering in Phosphorus-Implanted Czochralski Silicon and its Impact on Solar Cell Performancecitations
- 2013Passivation of black silicon boron emitters with atomic layer deposited aluminum oxidecitations
- 2008Metallization of Polymer Substrates for Flexible Electronics
Places of action
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article
Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopy
Abstract
<p>TiO<sub>2</sub> coatings are often deposited over silicon-based devices for surface passivation and corrosion protection. However, the charge transfer (CT) across the TiO<sub>2</sub>/Si interface is critical as it may instigate potential losses and recombination of charge carriers in optoelectronic devices. Therefore, to investigate the CT across the TiO<sub>2</sub>/Si interface, transient reflectance (TR) spectroscopy was employed as a contact-free method to evaluate the impact of interfacial SiO<sub>x</sub>, heat-treatments, and other phenomena on the CT. Thin-film interference model was adapted to separate signals for Si and TiO<sub>2</sub> and to estimate the number of transferred carriers. Charge transfer velocity was found to be 5.2 × 10<sup>4</sup> cm s<sup>−1</sup> for TiO<sub>2</sub> heat-treated at 300 °C, and even faster for amorphous TiO<sub>2</sub> if the interfacial SiO<sub>x</sub> layer was removed using HF before TiO<sub>2</sub> deposition. However, the interface is easily oversaturated because of slow carrier diffusion in TiO<sub>2</sub> away from the TiO<sub>2</sub>/Si interface. This inhibits CT, which could become an issue for heavily concentrated solar devices. Also, increasing the heat-treatment temperature from 300 °C to 550 °C has only little impact on the CT time but leads to reduced carrier lifetime of ¡3 ns in TiO<sub>2</sub> due to back recombination via the interfacial SiO<sub>x</sub>, which is detrimental to TiO<sub>2</sub>/Si device performance.</p>