| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oughaddou, Hamid
Cergy-Pontoise University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2023Dirac Fermions in Blue Phosphorene Monolayercitations
- 2023Dirac Fermions in Blue Phosphorene Monolayercitations
- 2023First steps of silicene growth on an insulating thin-film: effect of the substrate temperature
- 2023First steps of silicene growth on an insulating thin-film: effect of the substrate temperature
- 2023Structural properties of Bi/Au(110)
- 2021Electron beam analysis induces Cl vacancy defects in a NaCl thin filmcitations
- 2020Growth and characterization of nickel oxide ultra-thin filmscitations
- 2020Growth and characterization of nickel oxide ultra-thin filmscitations
- 2020Evidence of new 2D material: Cu<sub>2</sub>Tecitations
- 2020Phosphorus Pentamers: Floating Nanoflowers form a 2D Networkcitations
- 2020Phase transition and thermal stability of epitaxial PtSe 2 nanolayer on Pt(111)citations
- 2020Evidence of new 2D material: Cu 2 Tecitations
- 2019Unoccupied electronic band structure of pentagonal Si nanoribbons on Ag(110)citations
- 2017Reaction kinetics of ultrathin NaCl films on Ag(001) upon electron irradiationcitations
- 2017Reaction kinetics of ultrathin NaCl films on Ag(001) upon electron irradiationcitations
- 2012A review on silicene - New candidate for electronicscitations
- 2010Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layercitations
- 2010Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layercitations
- 2009Growth of ultrathin film aluminum oxide on Ag(111)citations
Places of action
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article
Growth and characterization of nickel oxide ultra-thin films
Abstract
The oxidation of the Ni(111) surface under ultrahigh-vacuum conditions is studied experimentally with low-energy electron diffraction and high-resolution X-ray photoelectron spectroscopy. Exposure of the clean Ni(111) surface to molecular oxygen at room temperature followed by annealing at 400 K leads to the formation of two different structures (2x2) and 3√3 x 3√3)R30° , prior to the formation of the NiO(111) monolayer. The O1s core levels indicate that the obtained oxide is terminated by oxygen atoms while the valence band measurements clearly reveal the band gap of NiO. The energy difference between the Fermi level and the maximum of the valance band is extracted and is found to be 0.47 eV.