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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rochdi, Nabil
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article
Growth and characterization of nickel oxide ultra-thin films
Abstract
The oxidation of the Ni(111) surface under ultrahigh-vacuum conditions is studied experimentally with low-energy electron diffraction and high-resolution X-ray photoelectron spectroscopy. Exposure of the clean Ni(111) surface to molecular oxygen at room temperature followed by annealing at 400 K leads to the formation of two different structures (2x2) and 3√3 x 3√3)R30° , prior to the formation of the NiO(111) monolayer. The O1s core levels indicate that the obtained oxide is terminated by oxygen atoms while the valence band measurements clearly reveal the band gap of NiO. The energy difference between the Fermi level and the maximum of the valance band is extracted and is found to be 0.47 eV.