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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Paven, Claire Le
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Publications (3/3 displayed)
- 2021Perovskite (Sr<sub>2</sub>Ta<sub>2</sub>O<sub>7</sub>)<sub>100−x</sub>(La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>)<sub>x</sub> ceramics: From dielectric characterization to dielectric resonator antenna applicationscitations
- 2017Deposition and dielectric study as function of thickness of perovskite oxynitride SrTaO<sub>2</sub>N thin films elaborated by reactive sputteringcitations
- 2017Ferroelectric and dielectric study of strontium tantalum based perovskite oxynitride films deposited by reactive rf magnetron sputteringcitations
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article
Deposition and dielectric study as function of thickness of perovskite oxynitride SrTaO<sub>2</sub>N thin films elaborated by reactive sputtering
Abstract
The present study concerns the deposition of perovskite oxynitride SrTaO<sub>2</sub>N films and their dielectric characterization at low frequencies. Those radio frequency sputtered thin films have been obtained under a reactive plasma (92.3 vol.% Ar / 7.7 vol.% N<sub>2</sub>) for substrate temperatures ranging from 600 to 900°C. As shown by X-rays diffraction and band-gap measurements, the deposition temperature (T S) determines the film structure and leads to films with band-gap and cell volume approaching the ones of the SrTaO<sub>2</sub>N bulk material with increased T S. The dielectric study has been performed on polycrystalline, textured and epitaxial SrTaO<sub>2</sub>N layers deposited on conductive niobium doped SrTiO<sub>3</sub> substrates and thickness of films ranging from 30 to 900 nm. The related permittivities vary from 66.5 to 90 (@10kHz, room temperature). These low values do not point out an effect of the crystallographic strain of films, due to their thickness, on the permittivity values. The latter